A SiGe HBT power amplifier with 40% PAE for PCS CDMA applications

Author

Xiangdong Zhang ; Saycocie, C. ; Munro, S. ; Henderson, G.

Author_Institution

Boston Design Center, IBM Microelectron., Lowell, MA, USA

Volume

2

fYear

2000

fDate

11-16 June 2000

Firstpage

857

Abstract

This paper presents for the first time a high efficiency SiGe HBT based CDMA power amplifier (PA) for PCS handset applications. Under IS-95 CDMA modulation at 1.88 GHz and 3.4 V bias voltage, the two-stage amplifier exhibits 41% power-added efficiency and 30 dBm linear output power with -46 dBc adjacent-channel-power-ratio (ACPR) and 23 dB gain. The SiGe HBTs used in the amplifier were fabricated in a production qualified 8-inch SiGe BiCMOS production process. This performance demonstrates for the first time that SiGe technology can provide competitive performance for PCS wireless handset PA applications.

Keywords

Ge-Si alloys; MMIC phase shifters; UHF integrated circuits; UHF power amplifiers; bipolar MMIC; code division multiple access; heterojunction bipolar transistors; personal communication networks; semiconductor materials; telephone sets; 1.88 GHz; 23 dB; 3.4 V; 41 percent; BiCMOS production process; HBT power amplifier; IS-95 CDMA modulation; PAE; PCS CDMA applications; SiGe; adjacent-channel-power-ratio; handset applications; linear output power; two-stage amplifier; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Multiaccess communication; Personal communication networks; Power amplifiers; Production; Silicon germanium; Telephone sets; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.863315

Filename

863315