DocumentCode :
354150
Title :
An L-band high efficiency and low distortion power amplifier module using an HPF/LPF combined interstage matching circuit
Author :
Mori, K. ; Shinjo, S. ; Kitabayashi, F. ; Ohta, A. ; Ikeda, Y. ; Ishida, O.
Author_Institution :
Inf. Technol. R&D Centre, Mitsubishi Electr. Corp., Kanagawa, Japan
Volume :
2
fYear :
2000
fDate :
11-16 June 2000
Firstpage :
865
Abstract :
A three stage high power amplifier (HPA) module for wide-band CDMA handy phones using an HPF/LPF combined interstage matching circuit has been developed. An HPF/LPF combined interstage matching circuit can realize both the optimum load impedance of the second stage FET and the optimum source impedance of the third stage FET to achieve high efficiency. The developed three stage HPA module, size of which is 0.08cc (7 mm/spl times/7 mm./spl times/1.7 mm), achieves a power-added efficiency of 43.9% and an output power of 27.1 dBm with an adjacent channel leakage power (ACP) of -38 dBc at 1.95 GHz.
Keywords :
UHF power amplifiers; code division multiple access; high-pass filters; impedance matching; low-pass filters; mobile radio; telephone sets; 1.95 GHz; 43.9 percent; FET; HPF/LPF combined interstage matching circuit; L-band; adjacent channel leakage power; distortion; efficiency; high power amplifier module; mobile phone handset; power added efficiency; wideband CDMA handy phone; Circuits; FETs; High power amplifiers; Impedance; L-band; Multiaccess communication; Optical amplifiers; Optical distortion; Power generation; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-5687-X
Type :
conf
DOI :
10.1109/MWSYM.2000.863317
Filename :
863317
Link To Document :
بازگشت