DocumentCode :
3541505
Title :
Experimental study on silicon nanowire nMOSFET and single-electron transistor at room temperature under uniaxial tensile strain
Author :
Jeong, YeonJoo ; Miyaji, Kousuke ; Hiramoto, Toshiro
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
fYear :
2008
fDate :
15-16 June 2008
Firstpage :
1
Lastpage :
2
Abstract :
Uniaxial tensile strain effects on [110] directed silicon nanowire nMOSFETs (NWFETs) and single-electron transistors (SETs) were experimentally studied for the first time. It is found that strain effect is still effective in extremely narrow NWFETs and that transverse tensile strain offers more favorable effects than longitudinal one in terms of Ion/Ioff ratio. Current enhancement in SET is also observed at drift region, although complicated strain effect at oscillation region, attributed to modulation of potential structure and rearrangement of tunneling condition, is observed. Fig. 1 summarizes main points of uniaxial tensile strain effects on NWFET and SET.
Keywords :
MOSFET; nanowires; single electron transistors; tunnelling; NWFET; Si; drift region; oscillation region; silicon nanowire nMOSFET; single-electron transistor; strain effect; transverse tensile strain; tunneling condition; uniaxial tensile strain; Germanium silicon alloys; Heart; MOSFET circuits; Modems; Physics; Quantum dots; Silicon germanium; Single electron transistors; Temperature; Tensile strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
Type :
conf
DOI :
10.1109/SNW.2008.5418461
Filename :
5418461
Link To Document :
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