• DocumentCode
    3541604
  • Title

    Temperature dependence of effective channel length, source/drain resistance, and electron mobility in sub-50 nm MOSFETs

  • Author

    Kim, Junsoo ; Lee, Jaehong ; Yun, Yeonam ; Park, Byung-Gook ; Lee, Jong Duk ; Shin, Hyungcheol

  • Author_Institution
    Nano Systems Institute (NSI), Inter-University Semiconductor Research Center (ISRC), and School of EE, Seoul National University, San 56-1 Shinlim-dong, Kwanak-ku, Korea
  • fYear
    2008
  • fDate
    15-16 June 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, an experimental investigation on high temperature carrier mobility in MOSFETs is carried out with the aim of improving our understanding of carrier transport. The effective mobility is sensitive to the values of the effective channel length (Leff) and source/drain resistance (RSD). Therefore the extraction of Leff and RSD was performed in extracting carrier mobility at high temperature.
  • Keywords
    Capacitance-voltage characteristics; Current measurement; Electrical resistance measurement; Electron mobility; MOSFETs; Scattering; Temperature dependence; Temperature measurement; Temperature sensors; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    978-1-4244-2071-1
  • Type

    conf

  • DOI
    10.1109/SNW.2008.5418474
  • Filename
    5418474
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3541604