Title :
Transient response analysis of programming/readout characteristics for NEMS memory
Author :
Nagami, T. ; Matsuda, S. ; Tsuchiya, Y. ; Saito, S. ; Arai, T. ; Shimada, T. ; Mizuta, H. ; Oda, S.
Author_Institution :
QNERC, Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
We analyzed the switching and readout properties of the NEMS memory. We found that the damping factor influences highly on the transient response time and is important for the fast operations. By assuming the best damping parameter, the transient response times for the readout operation were found about 20 ns and 90 ns for the ON and OFF states, respectively. And the switching time was about 80 ns for the 7.5 V gate voltage.
Keywords :
integrated memory circuits; nanoelectromechanical devices; transient response; NEMS memory; readout properties; switching properties; transient response analysis; voltage 7.5 V; Computational modeling; Damping; Nanoelectromechanical systems; Nonvolatile memory; Silicon; Steady-state; Time factors; Transient analysis; Transient response; Voltage;
Conference_Titel :
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-2071-1
DOI :
10.1109/SNW.2008.5418477
