• DocumentCode
    3541636
  • Title

    Impact of scaling on electrostatics of Germanium-channel MOSFET — analytical study

  • Author

    Batail, E. ; Monfray, S. ; Pouydebasque, A. ; Ghibaudo, G. ; Skotnicki, Thomas

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2008
  • fDate
    15-16 June 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The electrostatics of germanium-channel MOSFETs is often mentioned as an issue for Ge integration in future technology nodes. In this paper we present two original analytical models for Ge MOSFET electrostatics, developed for bulk and Ge-on-insulator (GeOI) architectures. Using these new models, we show that ultrathin GeOI devices present equivalent threshold voltage control as silicon-on-insulator (SOI) devices.
  • Keywords
    MOSFET; electrostatics; elemental semiconductors; germanium; semiconductor-insulator boundaries; Ge; Ge MOSFET electrostatics; Ge-on-insulator architecture; germanium-channel MOSFET; scaling; threshold voltage control; ultrathin GeOI device; Analytical models; Doping; Electrostatic analysis; Germanium; MOSFET circuits; Poisson equations; Semiconductor process modeling; Silicon on insulator technology; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-2071-1
  • Type

    conf

  • DOI
    10.1109/SNW.2008.5418479
  • Filename
    5418479
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3541636