DocumentCode
3541683
Title
Quantum simulation study of dual-material double gate (DMDG) MOSFET: NEGF approach
Author
Arefinia, Zahra ; Orouji, Ali A.
Author_Institution
Dept. of Electr. Eng., Semnan Univ., Semnan, Iran
fYear
2008
fDate
15-16 June 2008
Firstpage
1
Lastpage
2
Abstract
To combine the advantages of both DG (dual material gate) structures, in this paper we simulate the dual material double gate (DMDG) SOI MOSFET. We use 2D quantum simulation which is based on the self-consistent solution of the 2D Poisson-Schrodinger equation with open boundary conditions, within the non-equilibrium Green´s function (NEGF) formulation.
Keywords
Green´s function methods; MOSFET; electron density; DMDG structure; MOSFET; NEGF approach; drain induced barrier lowering; drain source voltages; dual material double gate; electron density; gate source biases; nonequilibrium Green´s function; poly front gate; quantum simulation study; threshold voltage; transconductance; voltage 0.05 V; Analytical models; Electron devices; Large-scale systems; MOSFET circuits; Potential energy; Predictive models; Production; Silicon on insulator technology; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
Conference_Location
Honolulu, HI
Print_ISBN
978-1-4244-2071-1
Type
conf
DOI
10.1109/SNW.2008.5418485
Filename
5418485
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