Theoretical evaluation of performance in biaxially-strained GaAs and In0.75Ga0.25As NMOS DGFETs

Author

Kim, Donghyun ; Krishnamohan, T. ; Saraswat, Krishna C.

Author_Institution

Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA

fYear

2008

fDate

15-16 June 2008

Firstpage

1

Lastpage

2

Abstract

In_xGa_1-xAs is a very promising candidate for future NFETs. The performance tradeoffs in biaxial-strained In_0.75Ga_0.25As and GaAs NMOS DGFETs have been thoroughly investigated under ballistic transport, taking in to account non-parabolic full band structure, quantum effects, BTBT and SCE. The real and complex band structures for (001)/(111) orientations and biaxial tensile/compressive strains are calculated using LEPM. The main factors affecting the performance of the III-V materials, are the mefr, Â¿E_Â¿L, Eg and m_Tunnel. 4% biaxial compressive strain reduces leakage current in In_0.75Ga_0.25 AS (111) NMOS DGFET below the 100nA/um. I_ON of GaAs (001) NMOS DGFET can be increased up to 4mA/um from 3.3mA/um with the application of biaxial tensile strain.

Keywords

III-V semiconductors; MOS integrated circuits; MOSFET; ballistic transport; gallium arsenide; indium compounds; leakage currents; III-V material; InGaAs; NFET; NMOS DGFET; ballistic transport; biaxial compressive strain; biaxial tensile strain; leakage current; nonparabolic full band structure; quantum effect; Ballistic transport; Capacitive sensors; Effective mass; Gallium arsenide; III-V semiconductor materials; MOS devices; Photonic band gap; Semiconductor materials; Tensile strain; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE

Conference_Location

Honolulu, HI

Print_ISBN

978-1-4244-2071-1

Type

conf

DOI

10.1109/SNW.2008.5418489

Filename

5418489