Integration of a resonant tunneling diode and an optical waveguide to form an electroabsorption modulator with a large bandwidth to drive voltage ratio

Author

Figueiredo, J.M.L. ; Leite, A.M.P. ; Stanley, C.R. ; Ironside, C.N.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

1998

fDate

3-8 May 1998

Firstpage

263

Abstract

Summary form only given. We have demonstrated a new device concept; by introducing a resonant tunnelling diode (RTD) to an optical waveguide, an InAlGaAs-InP electroabsorption modulator can be integrated with a high bandwidth electrical amplifier. The results are an early indication that the device does have a large bandwidth-to-drive-voltage ratio due to the electrical gain and a large modulation bandwidth.

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; optical waveguides; resonant tunnelling diodes; InAlGaAs-InP; InAlGaAs-InP electroabsorption modulator; device concept; electrical gain; high bandwidth electrical amplifier; integrated optics; large bandwidth to drive voltage ratio; large modulation bandwidth; optical waveguide; resonant tunneling diode; Bandwidth; Diodes; Integrated optics; Optical amplifiers; Optical devices; Optical modulation; Optical waveguides; Resonant tunneling devices; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676143

Filename

676143