• DocumentCode
    3541739
  • Title

    Compact modeling of surrounding-gate MOSFETs with doped channel in subthreshold region

  • Author

    Choi, Byung-Kil ; Jeong, Min-Kyu ; Kwon, Hyuck-In ; Lee, Jong-Ho

  • Author_Institution
    Sch. of Electron. & Electr. Eng., Kyungpook Nat. Univ., Daegu, South Korea
  • fYear
    2008
  • fDate
    15-16 June 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The modeling of the surface potential and diffusion current of SG MOSFETs with doped channel in the subthreshold region was preformed in this study. The compact models were verified in terms of channel length, fin body width, and body doping concentration at a given VGS and VDS by comparing with the results of the 3-D device simulation, and shown a good agreement with 3-D simulation.
  • Keywords
    MOSFET; Poisson equation; diffusion; doping profiles; semiconductor device models; semiconductor doping; surface potential; 3D device simulation; body doping concentration; channel length; compact modeling; diffusion current; doped channel; fin body width; subthreshold region; surface potential; surrounding-gate MOSFET; Controllability; Doping; Integrated circuit modeling; MOSFETs; Nanoscale devices; Poisson equations; Semiconductor device modeling; Semiconductor process modeling; Subthreshold current; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-2071-1
  • Type

    conf

  • DOI
    10.1109/SNW.2008.5418492
  • Filename
    5418492
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3541739