Femtosecond all-optical modulator based on virtual exciton effects in an anisotropically strained multiple quantum well

Author

Wraback, M. ; Shen, H. ; Kuo, J.

Author_Institution

Sensors & Electron Devices Directorate, US Army Res. Lab., Adelphi, MD, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

265

Lastpage

266

Abstract

Summary form only given. We present data on an all-optical (ASMQW) anisotropically strained multiquantum well modulator with femtosecond switching times that exploits the coherent transient phenomena associated with the interaction of virtual excitons with resonantly excited excitons in the ultrafast adiabatic following regime. The ASMQW used in this study is composed of a (100) grown 150-period, 80 /spl Aring/ GaAs-AlGaAs MQW attached to lithium tantalate (LiTaO/sub 3/).

Keywords

aluminium compounds; excitons; gallium arsenide; high-speed optical techniques; optical modulation; optical switches; semiconductor quantum wells; (100) grown; 80 A; GaAs-AlGaAs; GaAs-AlGaAs MQW; LiTaO/sub 3/; all-optical anisotropically strained multiquantum well modulator; anisotropically strained multiple quantum well; coherent transient phenomena; femtosecond all-optical modulator; femtosecond switching times; lithium tantalate; resonantly excited excitons; ultrafast adiabatic following regime; virtual exciton effects; virtual excitons; Anisotropic magnetoresistance; Capacitive sensors; Delay effects; Excitons; Optical polarization; Optical pulses; Optical pumping; Probes; Quantum well devices; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676146

Filename

676146