Theoretical performance of GaAs solar cell, with band gap gradient layer on the back region

Author

Benslimane, Hassane ; Abderahman, Hemmani ; Abderrachid, Helmaoui

Author_Institution

Phys. Dept., Univ. of Bechar, Bechar, Algeria

fYear

2009

fDate

19-22 Dec. 2009

Firstpage

398

Lastpage

401

Abstract

GaAs solar cell with graded band gap layer in the back region is analyzed as a function of the electric field created by band gap gradient and the base thickness. Studies are reported at AM 1.5, and unity solar concentration. The optimum thickness of the base region is determined. The performance of the cell strongly depends on the electric field. Comparison with the GaAs cell including high-low junction at the back surface show that the use of back surface field created by graded band gap improve the performance of the GaAs conventional cell.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; p-n heterojunctions; solar cells; GaAs-AlGaAs; band gap gradient layer; electric field; graded band gap layer; high-low junction; n-p heterojunction back surface field; optimum base thickness; solar cell; unity solar concentration; Equations; Gallium arsenide; Heterojunctions; Laboratories; Microelectronics; Photonic band gap; Photovoltaic cells; Physics; Semiconductor devices; Surface treatment; GaAs solar cell; Graded band gap; back surface field;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (ICM), 2009 International Conference on

Conference_Location

Marrakech

Print_ISBN

978-1-4244-5814-1

Type

conf

DOI

10.1109/ICM.2009.5418597

Filename

5418597