Title :
Oxygen induced limitation on grain growth in RF sputtered Indium tin oxide thin films
Author :
Lamsal, Buddhi Sagar ; Yung Huh ; Dubey, Manisha ; Manoj, K.C. ; Venkatesan, S. ; Qiquan Qiao ; Galipeau, David ; Qi Hua Fan
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., South Dakota State Univ., Brookings, SD, USA
Abstract :
Indium tin oxide (ITO) thin films were deposited onto glass substrates by RF magnetron sputtering to study variation of grain growth in pure argon and 99% argon plus 1% oxygen at different substrate temperatures. The average grain size increased with the increasing substrate temperature in pure argon. However, in oxygen presence environment the grain growth is limited at above 150°C. The films optoelectronic properties were evaluated. It was found that 200 nm ITO films prepared at 220 °C substrate temperature in pure argon possessed optimum sheet resistance of 10 Ω/sq. The transmittance of ITO films was enhanced with increasing the substrate temperature in pure argon but limited by the presence of excess oxygen.
Keywords :
grain growth; grain size; indium compounds; semiconductor growth; semiconductor thin films; sputter deposition; ITO; RF magnetron sputtering; SiO2; glass substrates; grain growth; grain size; indium tin oxide thin films; optoelectronic properties; oxygen induced limitation; sheet resistance; temperature 220 degC; Argon; Films; Grain size; Indium tin oxide; Radio frequency; Substrates; Temperature;
Conference_Titel :
Electro/Information Technology (EIT), 2013 IEEE International Conference on
Conference_Location :
Rapid City, SD
Print_ISBN :
978-1-4673-5207-9
DOI :
10.1109/EIT.2013.6632655