Title :
Investigation on the optical gain and threshold current density of Ga1−xInxAs1−y−zNySbz /GaAs strained quantum wells laser
Author :
Aissat, Abdelkader ; Nacer, Said ; Ykhlef, Farid ; Vilcot, Jean Pierre
Author_Institution :
LATSI Lab., Univ. Saad Dahlab of Blida, Blida, Algeria
Abstract :
The aim of this work is to exploit the properties of the GaInAsNSb/GaAs alloy compressive highly strain structure. Ga1-xInxAs1-y-zNySbz has been found to be a potentially superior material to GaInAsN for optical fiber communications long wavelength laser (VCSELs) applications. Indeed, this material has the property that it can be grown on a GaAs substrate while having a bandgap smaller than that of GaInAs. We study the influence of nitrogen and antimony on the lattice parameter and then the strain. Also, the effect of these two elements on the optical gain and threshold current density is investigated.
Keywords :
III-V semiconductors; current density; energy gap; gallium arsenide; indium compounds; internal stresses; lattice constants; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; Ga1-xInxAs1-y-zNySbz-GaAs; GaAs; GaAs substrate; VCSEL applications; alloyed high compressive strain structure; bandgap; lattice parameter; long wavelength laser; optical fiber communications; optical gain; strained quantum well laser; threshold current density; Nitrogen; GaInNAs; GaInNAsSb/GaAs; Lasers diode; Optoelectronics; strained quantum wells;
Conference_Titel :
Multimedia Computing and Systems (ICMCS), 2012 International Conference on
Conference_Location :
Tangier
Print_ISBN :
978-1-4673-1518-0
DOI :
10.1109/ICMCS.2012.6320124
