Title :
GRT model of RTS noise in MOSFETs
Author :
Sikula, Josef ; Pavelka, Jan ; Tacano, Munecazu ; Toita, Masato
Author_Institution :
Brno Univ. of Technol., Brno, Czech Republic
Abstract :
Random Telegraph Signal (RTS) noise in submicron MOSFETs showing a capture process, which deviates from the standard Shockley-Read-Hall kinetics, is analyzed using generation-recombination-tunneling model of current modulation in order to explain quadratic dependence of capture rate on current. Proposed model of two-step charge carrier quantum transitions involving secondary trap at the channel and gate oxide interface better represents observed complex switching phenomena in nanoscale devices, as is confirmed by presented experimental results.
Keywords :
MOSFET; electron-hole recombination; random noise; semiconductor device models; semiconductor device noise; tunnelling; MOSFET; RTS noise; Shockley-Read-Hall kinetics; generation-recombination-tunneling model; random telegraph signal noise; two-step charge carrier quantum transitions; Acoustical engineering; Charge carriers; Electron traps; Fluctuations; Kinetic theory; MOSFETs; Noise generators; Semiconductor device noise; Telegraphy; Tunneling; Burst noise; MOSFETs; modeling; quantum theory; semiconductor device noise;
Conference_Titel :
Microelectronics (ICM), 2009 International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-5814-1
DOI :
10.1109/ICM.2009.5418625
