DocumentCode
3542182
Title
Didactic simulation of a metal oxide semiconductor structure
Author
Magrez, Hamid ; Kassmi, Khalil ; Ziyyat, Abdelhak
Author_Institution
Electron. & Syst. Lab., Mohammed First Univ., Oujda, Morocco
fYear
2009
fDate
19-22 Dec. 2009
Firstpage
300
Lastpage
303
Abstract
In this paper, we present an interactive simulation of a Metal-Oxide-Semiconductor structure, based on a qualitative approach. The code is written in ActionScript/Flash to enjoy all the benefits of this technology in the multimedia field. In addition, our simulation combines theoretical and practical concepts on the same graphical interface: it shows the impact of physical and electrical parameters on the behavior of a MOS structure or a transistor TMOS. Moreover, it provides the physical reasons of the parameters influence that can serve to evaluate the relevance of approximations commonly used. This simulation is applied in engineering education.
Keywords
MOSFET; electronic engineering computing; interactive systems; semiconductor device models; ActionScript; Flash; MOS structure; didactic simulation; interactive simulation; metal-oxide-semiconductor structure; transistor TMOS; Dielectric materials; Electromagnetic analysis; Electronic components; Electrostatics; Engineering education; Inorganic materials; MOSFETs; Microelectronics; Neodymium; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics (ICM), 2009 International Conference on
Conference_Location
Marrakech
Print_ISBN
978-1-4244-5814-1
Type
conf
DOI
10.1109/ICM.2009.5418626
Filename
5418626
Link To Document