• DocumentCode
    3542182
  • Title

    Didactic simulation of a metal oxide semiconductor structure

  • Author

    Magrez, Hamid ; Kassmi, Khalil ; Ziyyat, Abdelhak

  • Author_Institution
    Electron. & Syst. Lab., Mohammed First Univ., Oujda, Morocco
  • fYear
    2009
  • fDate
    19-22 Dec. 2009
  • Firstpage
    300
  • Lastpage
    303
  • Abstract
    In this paper, we present an interactive simulation of a Metal-Oxide-Semiconductor structure, based on a qualitative approach. The code is written in ActionScript/Flash to enjoy all the benefits of this technology in the multimedia field. In addition, our simulation combines theoretical and practical concepts on the same graphical interface: it shows the impact of physical and electrical parameters on the behavior of a MOS structure or a transistor TMOS. Moreover, it provides the physical reasons of the parameters influence that can serve to evaluate the relevance of approximations commonly used. This simulation is applied in engineering education.
  • Keywords
    MOSFET; electronic engineering computing; interactive systems; semiconductor device models; ActionScript; Flash; MOS structure; didactic simulation; interactive simulation; metal-oxide-semiconductor structure; transistor TMOS; Dielectric materials; Electromagnetic analysis; Electronic components; Electrostatics; Engineering education; Inorganic materials; MOSFETs; Microelectronics; Neodymium; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics (ICM), 2009 International Conference on
  • Conference_Location
    Marrakech
  • Print_ISBN
    978-1-4244-5814-1
  • Type

    conf

  • DOI
    10.1109/ICM.2009.5418626
  • Filename
    5418626