Title :
Hydrodynamic simulation of drift mobility in n-Hg0.8Cd0.2Te
Author :
Daoudi, Mebarka ; Belghachi, Abderrahmane ; Varani, Luca
Author_Institution :
Lab. of Semicond. devices Phys., Univ. of Bechar, Bechar, Algeria
Abstract :
In this paper, the transport properties of Hg0.8Cd0.2Te have been investigated at 77 K using the hydrodynamic model. We remarked that ionized impurity scattering mechanism plays a dominant role in this material at low electric field. The drift velocity, mean energy and drift mobility are determined as a function of electric field strength. Comparison is made with Monte Carlo and experimental results. The obtained velocity- field curve is in good agreement with reported experimental data.
Keywords :
II-VI semiconductors; Monte Carlo methods; cadmium compounds; hydrodynamics; impurity scattering; mercury compounds; Hg0.8Cd0.2Te; Monte Carlo method; drift mobility; drift velocity; electric field strength; hydrodynamic model; ionized impurity scattering mechanism; mean energy; temperature 77 K; transport properties; velocity-field curve; Effective mass; Electron mobility; High definition video; Hydrodynamics; Laboratories; Monte Carlo methods; Optical scattering; Physics; Semiconductor devices; Semiconductor materials; Application of Monte Carlo method; Drift mobility; Hg0.8Cd0.2Te semiconductor; Hydrodynamic model; Transport properties;
Conference_Titel :
Microelectronics (ICM), 2009 International Conference on
Conference_Location :
Marrakech
Print_ISBN :
978-1-4244-5814-1
DOI :
10.1109/ICM.2009.5418630
