DocumentCode
3542374
Title
Spatially non-uniform field response in arrays of silicon quantum dots: DFT computation
Author
Kryjevski, Andrei ; Kilin, Dmitri ; Kilina, Svetlana
Author_Institution
Dept. of Phys. & Center for Computationally Assisted Sci. & Technol., North Dakota State Univ., Fargo, ND, USA
fYear
2013
fDate
9-11 May 2013
Firstpage
1
Lastpage
7
Abstract
We use Density Functional Theory (DFT) combined with the many body perturbation theory to calculate spatially non-uniform field response in several hydrogen-passivated silicon nanosystems, such as Si29H36 quantum dots (QDs) with crystalline and amorphous structures, the quasi-one dimensional (1-D) arrays constructed from these QDs. We model response to a spatially non uniform time dependent electric field that vanishes on every other QD. Current density induced by such electric field configurations serves as a characteristic of QD coupling in the arrays and, in particular, of the inter QD exciton transport. We observe rapid decay of the QD-QD coupling with the increase of inter QD separation and its complete diminishing at the QD-QD distance comparable with the size of the QD.
Keywords
current density; density functional theory; elemental semiconductors; excitons; hydrogen; nanostructured materials; passivation; perturbation theory; semiconductor quantum dots; silicon; DFT; Si-H; amorphous structures; crystalline structures; current density; density functional theory; electric field configurations; hydrogen-passivated silicon nanosystems; interquantum dot exciton transport; many body perturbation theory; quasione dimensional arrays; silicon quantum dots; spatially nonuniform field response; Computational modeling; Couplings; Current density; Discrete Fourier transforms; Nanostructures; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electro/Information Technology (EIT), 2013 IEEE International Conference on
Conference_Location
Rapid City, SD
ISSN
2154-0357
Print_ISBN
978-1-4673-5207-9
Type
conf
DOI
10.1109/EIT.2013.6632698
Filename
6632698
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