DocumentCode
3542886
Title
A 1.2 V sense amplifier for high-performance embeddable NOR flash memories
Author
Baderna, Davide ; Cabrini, Alessandro ; De Sandre, Guido ; De Santis, F. ; Pasotti, M. ; Rossini, A. ; Torelli, Guido
Author_Institution
Dipt. di Elettronica, Pavia Univ., Italy
fYear
2005
fDate
23-26 May 2005
Firstpage
1266
Abstract
This paper presents a sense amplifier scheme for low-voltage embeddable NOR flash memory applications. The architecture of the proposed sense amplifier is based on a folded cascode configuration which allow the bit-line voltage to be regulated even in the case of a power supply of about 1.08 V. The proposed scheme was designed using low-leakage transistors for a 0.13-μm flash CMOS technology. Simulation showed a read time of 16 ns and 11 ns for the worst-case and the best-case condition, respectively.
Keywords
CMOS memory circuits; amplifiers; flash memories; low-power electronics; voltage regulators; 0.13 micron; 1.08 V; 1.2 V; 11 ns; 16 ns; bit-line voltage regulation; embeddable NOR flash memories; flash CMOS technology; folded-cascode structure; low-leakage transistors; low-voltage sense amplifier; read time; Application software; CMOS technology; Decoding; Digital cameras; Electronic equipment; Flash memory; Operational amplifiers; Power supplies; Speech; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN
0-7803-8834-8
Type
conf
DOI
10.1109/ISCAS.2005.1464825
Filename
1464825
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