High efficiency wide bandwidth power supplies for GSM and EDGE RF power amplifiers

Author

Li, Yushan ; Maksimovic, Dragan

Author_Institution

Nat. Semicond., Longmont, CO, USA

fYear

2005

fDate

23-26 May 2005

Firstpage

1314

Abstract

This paper presents and compares three circuit architectures that are promising candidates to efficiently and dynamically supply GSM and EDGE RF power amplifiers in handsets. The candidate architectures include a switcher with hysteretic control, and two linear-assisted switcher configurations. The architectures have been implemented and tested by simulation in a standard 0.5 μm, 5 V CMOS process. The circuits are compared in terms of efficiency and reference tracking capabilities.

Keywords

CMOS integrated circuits; DC-DC power convertors; cellular radio; power amplifiers; switched mode power supplies; voltage regulators; 0.5 micron; 5 V; CMOS; DC-DC converter efficiency; EDGE RF power amplifiers; GSM power amplifiers; handset power amplifiers; high efficiency power supplies; hysteretic control; linear-assisted switched mode power supplies; low-drop-out linear regulator; reference tracking capability; wide bandwidth power supplies; Bandwidth; Circuits; GSM; High power amplifiers; Hysteresis; Power amplifiers; Power supplies; Radio frequency; Radiofrequency amplifiers; Telephone sets;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on

Print_ISBN

0-7803-8834-8

Type

conf

DOI

10.1109/ISCAS.2005.1464837

Filename

1464837