DocumentCode :
354312
Title :
A coplanar 148 GHz cascode amplifier MMIC using 0.15 /spl mu/m GaAs PHEMTs
Author :
Tessmann, A. ; Wohlgemuth, O. ; Reuter, R. ; Haydl, W. ; Massler, H. ; Hulsmann, A.
Author_Institution :
Fraunhofer Inst. of Appl. Solid State Phys., Freiburg, Germany
Volume :
2
fYear :
2000
fDate :
11-16 June 2000
Firstpage :
991
Abstract :
A two-stage D-band amplifier MMIC with 12 dB gain at 148 GHz has been developed, using a 0.15 /spl mu/m AlGaAs/InGaAs/GaAs PHEMT technology. The amplifier employs cascode HEMT devices with 2/spl times/30 /spl mu/m gate periphery, having a maximum oscillation frequency f/sub max/ of 180 GHz. On-wafer vector measurements up to 200 GHz were performed, using active probes based on nonlinear transmission lines. The circuit features coplanar technology for compact size and low cost. The overall chip-size is 1/spl times/1.5 mm/sup 2/.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; coplanar waveguide components; field effect MMIC; gallium arsenide; 0.15 micron; 12 dB; 148 GHz; AlGaAs/InGaAs/GaAs PHEMT; GaAs; coplanar cascode MMIC amplifier; two-stage D-band amplifier; Frequency; Gain; Gallium arsenide; HEMTs; Indium gallium arsenide; MMICs; PHEMTs; Performance evaluation; Semiconductor device measurement; Transmission line measurements;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-5687-X
Type :
conf
DOI :
10.1109/MWSYM.2000.863523
Filename :
863523
Link To Document :
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