A 33 GHz power amplifier based on an extended resonance technique

Author

Martin, A.L. ; Mortazawi, A.

Author_Institution

M/A-COM, Roanoke, VA, USA

Volume

2

fYear

2000

fDate

11-16 June 2000

Firstpage

999

Abstract

A Ka-band power amplifier based on an extended resonance power combining technique is presented. This technique enables the design of planar microstrip power amplifiers that are much more compact than those based on traditional quarter-wave hybrid designs. The extended resonance power combining amplifier presented here combines four GaAs MESFETs at 32.8 GHz using a planar structure that is more than 40% smaller than a quarter-wave hybrid power combining amplifier design, while the power-combining efficiency is 92%. The measured small-signal gain at 32.8 GHz is 4.6 dB, and at 1-dB compression the output power is 23.3 dBm with a power-added efficiency of 12.8%.

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; circuit resonance; field effect MIMIC; gallium arsenide; microstrip circuits; millimetre wave amplifiers; power combiners; 12.8 percent; 33 GHz; 4.6 dB; 92 percent; GaAs; III-V semiconductors; Ka-band; MESFETs; MMIC power amplifiers; extended resonance technique; output power; planar microstrip power amplifiers; power combining technique; power-added efficiency; power-combining efficiency; small-signal gain; Admittance; Circuit synthesis; FETs; Frequency; Millimeter wave communication; Millimeter wave technology; Millimeter wave transistors; Power amplifiers; Power generation; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.863525

Filename

863525