DocumentCode
3543173
Title
Low-temperature scanning tunneling microscope-induced luminescence of GaN
Author
Evoy, S. ; Harnett, C.K. ; Craighead, H.G. ; Eustis, T.J. ; Davis, W.A. ; Murphy, M.J. ; Schaff, W.J. ; Eastman, L.F.
Author_Institution
Sch. of Appl. & Eng. Phys., Cornell Univ., Ithaca, NY, USA
fYear
1998
fDate
3-8 May 1998
Firstpage
277
Abstract
Summary form only given. We present the scanning tunneling microscope-induced luminescence (STL) of MBE-grown GaN using a liquid helium (LHe) cooled UHV scanning tunnel microscope (STM) and discuss luminescence images at various wavelengths. To our knowledge, this is the first report of low-temperature STL of GaN. We also complement our STL study using low-temperature SEM-induced cathodoluminescence (SEM-CL).
Keywords
III-V semiconductors; gallium compounds; luminescence; scanning tunnelling microscopy; GaN; low temperature STL; scanning tunneling microscope induced luminescence; Gallium nitride; Light emitting diodes; Luminescence; Microscopy; Photonic band gap; Physics; Semiconductor lasers; Tail; Temperature sensors; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
1-55752-339-0
Type
conf
DOI
10.1109/CLEO.1998.676162
Filename
676162
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