Title :
A high-performance NAND and PRAM hybrid storage design for consumer electronic devices
Author :
Lee, Hyung Gyu ; Ryu, Seungwoo
Author_Institution :
Samsung Adv. Inst. of Technol., Samsung Electron. Co. Ltd., Giheung, South Korea
Abstract :
This paper presents a high performance storage solution for CE devices. The proposed storage consists of NAND flash memory and PRAM device. By the complementary use of two memory devices, we dramatically enhance the performance and life-time of NAND flash-based storage.
Keywords :
NAND circuits; consumer electronics; flash memories; phase change memories; PRAM hybrid storage design; consumer electronic devices; high-performance NAND flash memory; memory devices; Cloud computing; Consumer electronics; Costs; Flash memory; Hard disks; Mobile computing; Nonvolatile memory; Paper technology; Phase change random access memory; Power system reliability;
Conference_Titel :
Consumer Electronics (ICCE), 2010 Digest of Technical Papers International Conference on
Conference_Location :
Las Vegas, NV
Print_ISBN :
978-1-4244-4314-7
Electronic_ISBN :
978-1-4244-4316-1
DOI :
10.1109/ICCE.2010.5418766
