DocumentCode
3543245
Title
Table of contents
fYear
2012
fDate
Oct. 31 2012-Nov. 2 2012
Firstpage
1
Lastpage
2
Abstract
The following topics are dealt with: robust 2T-SONOS cell; magnetic tunneling junctions; NAND Flash; RRAM; resistive random access memory; OTP NV memory cell; discrete ferroelectric memory; ferroelectric-gate field-effect transistors; and CBRAM cell in Verilog-A.
Keywords
NAND circuits; ferroelectric storage; field effect transistors; hardware description languages; magnetic tunnelling; random-access storage; CBRAM cell; NAND Flash; OTP NV memory cell; RRAM; Verilog-A; discrete ferroelectric memory; ferroelectric-gate field-effect transistor; magnetic tunneling junction; resistive random access memory; robust 2T-SONOS cell; Adaptation models; Arrays; Flash memories; Nonvolatile memory; Random access memory; Resistance; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Memory Technology Symposium (NVMTS), 2012 12th Annual
Conference_Location
Singapore
Print_ISBN
978-1-4673-2847-0
Type
conf
DOI
10.1109/NVMTS.2013.6632848
Filename
6632848
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