Title :
Table of contents
fDate :
Oct. 31 2012-Nov. 2 2012
Abstract :
The following topics are dealt with: robust 2T-SONOS cell; magnetic tunneling junctions; NAND Flash; RRAM; resistive random access memory; OTP NV memory cell; discrete ferroelectric memory; ferroelectric-gate field-effect transistors; and CBRAM cell in Verilog-A.
Keywords :
NAND circuits; ferroelectric storage; field effect transistors; hardware description languages; magnetic tunnelling; random-access storage; CBRAM cell; NAND Flash; OTP NV memory cell; RRAM; Verilog-A; discrete ferroelectric memory; ferroelectric-gate field-effect transistor; magnetic tunneling junction; resistive random access memory; robust 2T-SONOS cell; Adaptation models; Arrays; Flash memories; Nonvolatile memory; Random access memory; Resistance; Switches;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2012 12th Annual
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2847-0
DOI :
10.1109/NVMTS.2013.6632848
