Conduction investigation in oxide-based resistive random access memory with low frequency noise analysis

Current conduction of different resistance states has been studied with low frequency noise analysis in this work. A model consisting of two parallel resistances from conductive filament and uniform leakage oxide is proposed to represent the conduction in filament type switching resistive random access memory cell. It is found that in the low resistance regime, filament resistance dominates current conduction and noise behavior which varies nearly to the square of resistance variable; while in the high resistance regime, uniform oxide leakage is the major source of conduction, it gives a nearly constant noise level.