Exploratory study of Resistive Random Access Memory (R-RAM) scaling beyond 10nm

We successfully demonstrate both WO_x and HfO_x based Transition Metal Oxide Resistive Random Access Memory (TMO R-RAM) devices with sub-10nm scaling. Contrary to similar results of large R-RAM devices, scaled WO_x and HfO_x devices beyond 10nm exhibit obvious differences on operation windows and thermal stabilities. Instead of reported conventional large scale TMO R-RAM, different boundary conditions of WO_x and HfO_x devices plays a dominant role of R-RAM switching mechanism between 5 and 10nm.