Exploratory study of Resistive Random Access Memory (R-RAM) scaling beyond 10nm

Author

ChiaHua Ho ; Fu-Liang Yang

Author_Institution

Nat. Nano Device Labs. (NDL), Nat. Appl. Res. Labs. (NARL), Hsinchu, Taiwan

fYear

2012

fDate

Oct. 31 2012-Nov. 2 2012

Firstpage

22

Lastpage

24

Abstract

We successfully demonstrate both WO_x and HfO_x based Transition Metal Oxide Resistive Random Access Memory (TMO R-RAM) devices with sub-10nm scaling. Contrary to similar results of large R-RAM devices, scaled WO_x and HfO_x devices beyond 10nm exhibit obvious differences on operation windows and thermal stabilities. Instead of reported conventional large scale TMO R-RAM, different boundary conditions of WO_x and HfO_x devices plays a dominant role of R-RAM switching mechanism between 5 and 10nm.

Keywords

magnetic switching; random-access storage; thermal stability; HfO_x; R-RAM devices; R-RAM scaling; R-RAM switching mechanism; WO_x; boundary conditions; operation windows; size 5 nm to 10 nm; thermal stabilities; transition metal oxide resistive random access memory; Electron devices; Hafnium compounds; Nanoscale devices; Random access memory; Resistance; Switches; Thermal stability; R-RAM; Resistive Random Access Memory; Transition Metal Oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2012 12th Annual

Conference_Location

Singapore

Print_ISBN

978-1-4673-2847-0

Type

conf

DOI

10.1109/NVMTS.2013.6632854

Filename

6632854