Title :
Ultra thin hybrid floating gate and high-k dielectric as IGD enabler of highly scaled planar NAND flash technology
Author :
Kar, Gouri Sankar ; Breuil, L. ; Blomme, P. ; Hody, Hubert ; Locorotondo, S. ; Jossart, N. ; Richard, O. ; Bender, Hugo ; Van den bosch, G. ; Debusschere, I. ; Van Houdt, J.
Author_Institution :
Imec, Leuven, Belgium
Abstract :
For the first time we demonstrate ultra-thin hybrid floating gate (HFG) planar NVM cell performance and reliability. Results not only confirm the high potential of the HFG thickness scaling down to 4 nm with improved program performance, but also show excellent post cycling data retention and P/E cycling endurance. The optimized ultra-thin HFG planar cells show potential for manufacturability and scalability for high density memory application.
Keywords :
NAND circuits; flash memories; high-k dielectric thin films; HFG thickness; IGD enabler; P-E cycling endurance; high density memory application; high-k dielectric; highly scaled planar NAND flash technology; manufacturability; post cycling data retention; program performance improvement; scalability; size 4 nm; ultra thin hybrid floating gate; Computer architecture; High K dielectric materials; Logic gates; Microprocessors; Nonvolatile memory; Silicon; Tin;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6478962
