Dependency of NAND flash memory cells on random dopant fluctuation (RDF) effects

Author

Jun Geun Kang ; Boram Han ; Kyoung-Rok Han ; Sung Jae Chung ; Gyu-Seog Cho ; Sung-Kye Park ; Woo Young Choi

Author_Institution

Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea

fYear

2012

fDate

Oct. 31 2012-Nov. 2 2012

Firstpage

37

Lastpage

40

Abstract

Dependency of random-dopant-fluctuation (RDF) on NAND flash memory cells has been simulated. It has been shown that the RDF effects are more serious in NAND flash memory cells than in CMOS devices. The simulation results show the variation of threshold voltage, on- and off-current depending on the doping concentration. Also, the program and erase characteristics of NAND flash memory cells have been evaluated depending on the RDF effects.

Keywords

CMOS logic circuits; CMOS memory circuits; NAND circuits; flash memories; CMOS devices; NAND flash memory cells; RDF effect; doping concentration; program-erase characteristics; random dopant fluctuation effect; threshold voltage; CMOS integrated circuits; Doping; Flash memories; Logic gates; MOSFET; Resource description framework; Threshold voltage; NAND flash memory cell; random dopant fluctuation (RDF); threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2012 12th Annual

Conference_Location

Singapore

Print_ISBN

978-1-4673-2847-0

Type

conf

DOI

10.1109/NVMTS.2013.6632858

Filename

6632858