DocumentCode
354332
Title
Time domain characterization of planar microwave transformers using the SCN-TLM method
Author
Rebel, J. ; Wohlmuth, H.-D. ; Russer, Peter
Author_Institution
Inst. fur Hochfrequenztech., Tech. Univ. Munchen, Germany
Volume
2
fYear
2000
fDate
11-16 June 2000
Firstpage
1109
Abstract
This paper describes the time domain characterization of planar microwave transformers for monolithic RF power amplifiers using the SCN-TLM method. The primary objective of this study is to determine the influence of losses on the electrical properties of such transformers. It emerges that the principle loss mechanism originates from conductor losses of the windings. The influence of the lossy silicon substrate can be neglected up to 5 GHz.
Keywords
MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; losses; planar waveguides; time-domain analysis; transmission line matrix methods; 1 to 5 GHz; SCN-TLM method; conductor losses; electrical properties; monolithic RF power amplifiers; planar microwave transformers; time domain characterization; Circuit synthesis; Conductors; Isolation technology; Microwave theory and techniques; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Silicon; Transformers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.863551
Filename
863551
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