Highly-scalable threshold switching select device based on chaclogenide glasses for 3D nanoscaled memory arrays

We present here on a switch device made of a nitridized-chalcogenide glass for application in nanoscale array circuits. Previously, AsTeGeSi-based switches have had key issues with performance degradation over time. This is usually due to changes in the Te concentration in the device active region [1-3]. However, our AsTeGeSiN switches were able to overcome this limitation as well as scale down to 30 nm with an on current of 100 μA (J > 1.1×10⁷A/cm²). Their cycling performance was shown to be greater than 10⁸. Also, we demonstrate a memory cell using a TaO_x resistance memory with the AsTeGeSiN select device.