Design and characterization of tantalum-nitride switch for one-time-programmable memory applications

Embedded non-volatile memory (NVM) integrated in the back-end of the line process are of high interest, particularly for rugged environments. This work demonstrates the use of tantalum nitride micro-beams as antifuse one-time-programmable (OTP) NVM. The NVM operation is based on OPEN/CLOSE cantilever switch and one-time or multi-time programmable storage functions could be achieved. It only needs a single mask process and can be integrated above IC. Typical fusing current is 1mA, operating voltage is 4V and the measured contact resistance is lower than 2kΩ. A hybrid 1-transistor/1-micro-beam per bit memory array is proposed, for back-end compatible and low-cost OTP NVM integration. Due to the charge storage-free and bistable MEMS operation, the NVM operation is insensitive to high-temperature or radiation. This kind of memory device may be useful for space and harsh environment application.