Title :
Sub-30nm scaling and high-speed operation of fully-confined Access-Devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials
Author :
Virwani, Kumar ; Burr, Geoffrey W. ; Shenoy, Rohit S. ; Rettner, Charles T. ; Padilla, Alexandra ; Topuria, Teya ; Rice, P.M. ; Ho, G. ; King, R.S. ; Nguyen, Khanh ; Bowers, A.N. ; Jurich, M. ; BrightSky, M. ; Joseph, Eric A. ; Kellock, A.J. ; Arellano, N
Author_Institution :
IBM Almaden Res. Center, San Jose, CA, USA
Abstract :
BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials [1-3] are shown to scale to the <;30nm CDs and <;12nm thicknesses found in advanced technology nodes. Switching speeds at the high (>100uA) currents of NVM writes can reach 15ns; NVM reads at typical (~5uA) current levels can be ≪1usec.
Keywords :
copper; ionic conductivity; random-access storage; three-dimensional integrated circuits; 3D crosspoint memory; BEOL-friendly access devices; Cu; MIEC materials; MRAM; advanced technology nodes; fully-confined access-devices; mixed-ionic-electronic-conduction materials; nonvolatile memory; Current measurement; Nonvolatile memory; Phase change materials; Pulse measurements; Switches; Voltage measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6478967
