Title :
Threshold Vacuum Switch (TVS) on 3D-stackable and 4F2 cross-point bipolar and unipolar resistive random access memory
Author :
ChiaHua Ho ; Hsin-Hau Huang ; Ming-Taou Lee ; Cho-Lun Hsu ; Tung-Yen Lai ; Wen-Cheng Chiu ; MeiYi Lee ; Tong-Huan Chou ; Yang, I. ; Min-Cheng Chen ; Cheng-San Wu ; Kuang-Hao Chiang ; Yong-Der Yao ; Chenming Hu ; Fu-Liang Yang
Author_Institution :
Nat. Nano Device Labs. (NDL), Nat. Appl. Res. Labs. (NARL), Taiwan
Abstract :
A 3D stackable and bidirectional Threshold Vacuum Switching (TVS) selector using the same WOx material as the RRAM element is reported. It provides the highest reported current density of >108 A/cm2 and the highest selectivity of >105. Stress test at high current density indicates >108 cycle capability for Reset/Set operation. A mechanism based on recombination of oxygen-ions and vacancies is proposed for the observed volatile switching of TVS. Utilizing the threshold characteristics of the TVS selector, a two-step reading waveform offers potential for 3D-stackable and 4F2 cross-point RRAM applications.
Keywords :
current density; random-access storage; tungsten compounds; vacuum switches; 3D stackable selector; 4F2 crosspoint bipolar RRAM; TVS selector; WOx; bidirectional threshold vacuum switching selector; current density; cycle capability; oxygen-ions; reset-set operation; stress test; two-step reading waveform; unipolar resistive random access memory; vacancies; volatile switching; Arrays; Current density; Educational institutions; Nonvolatile memory; Resistance; Silicon compounds; Switches;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6478968
