Investigation of resistive switching in bipolar TaOx-based resistive random access memory

Author

Zhuo, V.Y.-Q. ; Jiang, Yizhang ; Sze, J.Y. ; Zhang, Zhenhao ; Pan, J.S. ; Zhao, Rong ; Shi, L.P. ; Chong, T.C. ; Robertson, John

Author_Institution

Data Storage I nstitute, A*STAR, Singapore, Singapore

fYear

2012

fDate

Oct. 31 2012-Nov. 2 2012

Firstpage

64

Lastpage

67

Abstract

Al/Ta₂O₅/Pt RRAM cell was successfully demonstrated with stable bipolar switching. Band alignment for the structure of Al/Ta₂O₅/Pt was obtained using high-resolution X-ray photoelectron spectroscopy to investigate resistance switching behavior. Hole barrier heights of Ta₂O₅ on metals Pt and Al were extracted using core level and valence band spectra. The energy band alignments of Pt/TaO_x and Al/TaO_x were thus determined and correlated to conduction mechanisms governing SET and RESET processes of actual bipolar Pt/TaO_x/Al devices.

Keywords

X-ray photoelectron spectra; random-access storage; tantalum compounds; Al-Ta₂O₅-Pt; RRAM cell; band alignment; bipolar switching; bipolar tantalum oxide-based resistive random access memory; core level; energy band alignment; high-resolution X-ray photoelectron spectroscopy; hole barrier heights; reset process; resistance switching behavior; set process; valence band spectra; Electrodes; Materials; Metals; Random access memory; Resistance; Semiconductor device measurement; Switches; RRAM; Resistive Random Access Memory; TaOx; XPS; bipolar;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2012 12th Annual

Conference_Location

Singapore

Print_ISBN

978-1-4673-2847-0

Type

conf

DOI

10.1109/NVMTS.2013.6632864

Filename

6632864