DocumentCode :
3543359
Title :
Switching energy efficiency optimization for advanced CPU thanks to UTBB technology
Author :
Arnaud, F. ; Planes, N. ; Weber, Olivier ; Barral, V. ; Haendler, S. ; Flatresse, Philippe ; Nyer, Frederic
Author_Institution :
STMicroelectron., Crolles, France
fYear :
2012
fDate :
10-13 Dec. 2012
Abstract :
This paper presents the superior performance of UTBB (Ultra-Thin Box and Body) technology for providing high speed at low voltage. We evidence the transistor capability to sustain full forward-body-biasing solution thanks to a planar back-side gate scheme. Silicon measurements on low complexity circuits show that the dynamic power consumption can be reduced by 90% without any speed degradation by simply selecting the appropriate power supply and body bias couple (Vdd; Vbb). A simple switching energy efficiency model is then proposed allowing the (Vdd; Vbb) couple prediction reaching the minimum energy point. Finally, we demonstrate on a full CPU Core implementation with UTBB a total power reduction of -30% and a +40% energy efficiency at identical speed with respect to bulk technology thanks to back side gate biasing efficiency.
Keywords :
MOSFET; circuit complexity; elemental semiconductors; energy conservation; multiprocessing systems; optimisation; power supplies to apparatus; silicon; switching circuits; Si; UTBB technology; advanced CPU; back side gate biasing efficiency; body bias couple; bulk technology; couple prediction; dynamic power consumption; full CPU core implementation; full forward-body-biasing solution; low complexity circuits; minimum energy point; planar back-side gate scheme; power supply; speed degradation; switching energy efficiency model; switching energy efficiency optimization; transistor capability; ultra-thin box and body technology; Delay; Energy efficiency; Logic gates; Silicon; Switches; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2012.6478970
Filename :
6478970
Link To Document :
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