A 400Mbps CMOS spatially-modulated photoreceiver for optical storage

Author

Chong, Euhan ; Phang, Khoman

Author_Institution

Mixed-Signal IP Group, Synopsys Inc., Mississauga, Ont., Canada

fYear

2005

fDate

23-26 May 2005

Firstpage

1537

Abstract

This paper presents a modified spatially modulated photodetector with greater efficiency for optical storage. The spatially modulated structure reduces intersymbol interference by cancelling the effect of photo-carriers generated deep in the substrate. Detector efficiency is enhanced by reducing the covered portion of the detector. Measured results from a chip fabricated in a standard 0.35 μm CMOS process, incorporating the proposed photodetector, transimpedance amplifiers, and differential amplifier, show a responsivity of 0.19 A/W and a bandwidth of 300 MHz.

Keywords

CMOS integrated circuits; differential amplifiers; optical receivers; optical storage; photodetectors; photodiodes; 0.35 micron; 300 MHz; 400 Mbit/s; CMOS; detector covered portion reduction; detector efficiency; differential amplifier; intersymbol interference reduction; optical storage; photo-carriers; photodetector; spatially-modulated photodiode; spatially-modulated photoreceiver; transimpedance amplifiers; CMOS process; Detectors; Differential amplifiers; Interference cancellation; Intersymbol interference; Measurement standards; Optical modulation; Photodetectors; Semiconductor device measurement; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on

Print_ISBN

0-7803-8834-8

Type

conf

DOI

10.1109/ISCAS.2005.1464893

Filename

1464893