Title :
High mobility zinc oxynitride-TFT with operation stability under light-illuminated bias-stress conditions for large area and high resolution display applications
Author :
Myungkwan Ryu ; Tae Sang Kim ; Kyoung Seok Son ; Hyun-Suk Kim ; Joon Seok Park ; Jong-Baek Seon ; Seok-Jun Seo ; Sun-Jae Kim ; EunHa Lee ; Hyungik Lee ; Sang Ho Jeon ; Seungwu Han ; Sang Yoon Lee
Abstract :
We have investigated material and electrical properties of ZnON based on 1st principle calculations and TFT evaluations. Theoretically, ZnON has high mobility characteristics and band-structure for high stability. Fabricated TFTs exhibited high mobility (100 cm2/Vs), good uniformity, and stable operation performance such as -2.87 V of Vth-shift under light illuminated bias-stress condition. As a new approach to overcome the performance limit of oxide-semiconductors, ZnON technology is strongly promising to achieve high mobility and operation stability required for next generation displays.
Keywords :
display devices; oxygen compounds; thin film transistors; zinc compounds; 1st principle calculations; ZnON; bandstructure; electrical properties; high mobility TFT; high resolution display applications; light-illuminated bias-stress conditions; material properties; operation stability; oxide-semiconductors; Films; Lighting; Logic gates; Stability analysis; Thin film transistors; Zinc oxide;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6478986
