DocumentCode
354349
Title
Modeling of MEMS capacitive switches by TLM
Author
Vietzorreck, L. ; Coccetti, F. ; Chtchekatourov, V. ; Russer, P.
Author_Institution
Inst. fur Hochfrequenztech., Tech. Univ. Munchen, Germany
Volume
2
fYear
2000
fDate
11-16 June 2000
Firstpage
1221
Abstract
The high-frequency behaviour of a microelectromechanical capacitive switch is investigated using TLM. A post-processing of the time-domain signal is presented which avoids long calculation times. The calculated results of a metal membrane switch show very good agreement to results obtained by other numerical methods and measurements.
Keywords
micromechanical devices; semiconductor device models; semiconductor switches; transmission line matrix methods; MEMS capacitive switches; TLM; calculation times; high-frequency behaviour; metal membrane switch; time-domain signal; Biomembranes; Conductors; Coplanar waveguides; Dielectric thin films; Electrodes; Frequency domain analysis; Micromechanical devices; Phased arrays; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.863579
Filename
863579
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