Title :
MOSFET performance and scalability enhancement by insertion of oxygen layers
Author :
Xu, Ningsheng ; Damrongplasit, Nattapol ; Takeuchi, H. ; Stephenson, Robert J. ; Cody, Nyles W. ; Yiptong, Augustin ; Huang, Xumin ; Hytha, Marek ; Mears, Robert J. ; Liu, T.-J King
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA
Abstract :
A detailed simulation and experimental study of MOSFET mobility enhancement and electrostatic integrity improvement achieved by the insertion of oxygen layers within the Si channel region is presented. The applicability of this technology to thin-body MOSFET structures is discussed. Projections indicate that it will be more effective than strain for boosting performance at the 14 nm node.
Keywords :
MOSFET; elemental semiconductors; semiconductor device reliability; silicon; MOSFET mobility enhancement; MOSFET performance; Si; channel region; electrostatic integrity improvement; oxygen layer insertion; scalability enhancement; size 14 nm; thin-body MOSFET structures; Electron mobility; FinFETs; Logic gates; MOSFET circuits; Oxygen; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6478990
