Title :
A compact model for double-gate tunneling field-effect-transistors and its implications on circuit behaviors
Author :
Lining Zhang ; Jin He ; Mansun Chan
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
A compact model for tunneling field-effect-transistors (TFETs) is presented. The model includes a band-to-band tunneling (BTBT) current module and a terminal charge module. TCAD simulations show that the model describes TFETs currents and capacitances accurately. The model is implemented into a circuit simulator and used to simulate TFETs logic circuits and SRAMs. Unique features in TEFTs including large overshoot during switching, long delay and uni-directional conduction are demonstrated.
Keywords :
SRAM chips; field effect transistors; logic circuits; semiconductor device models; tunnel transistors; BTBT current module; SRAM; TCAD simulations; TFET compact model; TFET logic circuit simulation; band-to-band tunneling; circuit behaviors; circuit simulator; double-gate tunneling field-effect-transistors; terminal charge module; unidirectional conduction; Capacitance; Electric potential; Integrated circuit modeling; Logic gates; Semiconductor device modeling; Transistors; Tunneling;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6478994
