DocumentCode
3543564
Title
Diamond semiconductor JFETs by selectively grown n+-diamond side gates for next generation power devices
Author
Iwasaki, Takuya ; Hoshino, Yuichi ; Tsuzuki, Ken ; Kato, Haruhisa ; Makino, Tatsuya ; Ogura, M. ; Takeuchi, D. ; Matsumoto, Tad ; Okushi, H. ; Yamasaki, Shintaro ; Hatano, M.
Author_Institution
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
fYear
2012
fDate
10-13 Dec. 2012
Abstract
Diamond semiconductor is an attractive material for next-generation power devices due to its wide band-gap, high breakdown field, and high thermal conductivity. By selective n+-type diamond growth, diamond junction field effect transistors (JFETs) were fabricated and operated from 223 to 573 K. JFETs show very low leakage currents in the 10-15 A range and a steep subthreshold slope (SS) of 81 mV/decade at room temperature. We confirm that the devices possess steep SS and low leakage current in the 10-14-10-15 A r a n ge s up to 423 K.
Keywords
diamond; junction gate field effect transistors; leakage currents; power field effect transistors; semiconductor growth; thermal conductivity; JFET; diamond semiconductor JFET; high breakdown field; high thermal conductivity; junction field effect transistors; leakage currents; n+-diamond side gates; next generation power devices; selective n+-type diamond growth; steep subthreshold slope; temperature 223 K to 573 K; temperature 293 K to 298 K; Diamonds; Face; JFETs; Leakage current; Logic gates; Temperature; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4673-4872-0
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2012.6478999
Filename
6478999
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