DocumentCode
3543582
Title
The ultimate CMOS device and beyond
Author
Kuhn, Kelin J. ; Avci, Uygar E. ; Cappellani, A. ; Giles, M.D. ; Haverty, Michael ; Seiyon Kim ; Kotlyar, Roza ; Manipatruni, Sasikanth ; Nikonov, Dmitri ; Pawashe, Chytra ; Radosavljevic, Milos ; Rios, Rafael ; Shankar, Subramaniam ; Vedula, R. ; Chau, R
Author_Institution
Technol. & Manuf. Group, Intel Corp., Hillsboro, OR, USA
fYear
2012
fDate
10-13 Dec. 2012
Abstract
For the past 40 years, relentless focus on Moore´s Law transistor scaling has delivered ever-improving CMOS transistor density. This paper discusses architectural and materials options which will contribute to the ultimate CMOS device. In addition, the paper reviews device options beyond the ultimate CMOS device.
Keywords
CMOS integrated circuits; CMOS device; CMOS transistor density; Moore law transistor scaling; CMOS integrated circuits; Face; Logic gates; Manufacturing; Materials; Metals; Performance evaluation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4673-4872-0
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2012.6479001
Filename
6479001
Link To Document