Polarity control in double-gate, gate-all-around vertically stacked silicon nanowire FETs

Author

De Marchi, Michele ; Sacchetto, Davide ; Frache, Stefano ; Zhang, Juyong ; Gaillardon, Pierre-Emmanuel ; Leblebici, Yusuf ; De Micheli, G.

Author_Institution

EPFL, Lausanne, Switzerland

fYear

2012

fDate

10-13 Dec. 2012

Abstract

We fabricated and characterized new ambipolar silicon nanowire (SiNW) FET transistors featuring two independent gate-all-around electrodes and vertically stacked SiNW channels. One gate electrode enables dynamic configuration of the device polarity (n or p-type), while the other switches on/off the device. Measurement results on silicon show I_on/I_off > 10⁶ and S ≈ 64mV/dec (70mV/dec) for p(n)-type operation in the same device. We show that XOR operation is embedded in the device characteristic, and we demonstrate for the first time a fully functional 2-transistor XOR gate.

Keywords

electrodes; elemental semiconductors; field effect transistors; nanoelectronics; nanowires; silicon; Si; ambipolar silicon nanowire FET transistors; device characteristic; double-gate gate-all-around vertically stacked silicon nanowire FET; fully functional 2-transistor XOR gate; independent gate-all-around electrodes; polarity control; switches on-off the device; vertically stacked SiNW channels; Fabrication; Field effect transistors; Integrated circuit modeling; Logic gates; Nanoscale devices; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2012 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4673-4872-0

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2012.6479004

Filename

6479004