Near-field optical study of InGaN/GaN quantum wells

Author

Vertikov, A. ; Kuball, M. ; Nurmikko, A.V. ; Chen, Yuanfeng ; Wang, S.Y.

Author_Institution

Div. of Eng., Brown Univ., Providence, RI, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

282

Abstract

Summary form only given. We use near-field scanning optical microscopy (NSOM) to analyze the influence of defects on the optical properties of InGaN-GaN QWs. The application of NSOM allows high spatial resolution photoluminescence (PL) measurements together with simultaneous topographic imaging. We have investigated both the PL efficiency and spectra of InGaN-GaN QWs, as well as their optical reflectance, with 100-nm spatial resolution.

Keywords

III-V semiconductors; gallium compounds; image resolution; indium compounds; near-field scanning optical microscopy; optical tomography; photoluminescence; reflectivity; semiconductor quantum wells; InGaN-GaN; InGaN-GaN QWs; InGaN/GaN quantum wells; PL efficiency; defects; high spatial resolution photoluminescence; near-field optical study; near-field scanning optical microscopy; optical properties; optical reflectance; spatial resolution; topographic imaging; Atom optics; Gallium nitride; Graphics; Laser theory; Optical microscopy; Optical reflection; Optimized production technology; Quantum well lasers; Spatial resolution; Surfaces;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676168

Filename

676168