DocumentCode
3543658
Title
RRAM SET speed-disturb dilemma and rapid statistical prediction methodology
Author
Wun-Cheng Luo ; Jen-Chieh Liu ; Hsien-Tsung Feng ; Yen-Chuan Lin ; Jiun-Jia Huang ; Kuan-Liang Lin ; Tuo-Hung Hou
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2012
fDate
10-13 Dec. 2012
Abstract
This paper presents a first comprehensive study of SET speed-disturb dilemma in RRAM using statistically-based prediction methodologies. A rapid ramped-voltage stress based on percolation model and power-law V-t dependence showed excellent agreement with the time-consuming constant-voltage stress, and was applied to evaluate current status of RRAM devices in the literature.
Keywords
random-access storage; statistical analysis; stress analysis; RRAM SET speed-disturb dilemma; RRAM devices; percolation model; power-law V-t dependence; rapid ramped-voltage stress; rapid statistical prediction methodology; time-consuming constant-voltage stress; Current measurement; Hafnium compounds; Resistance; Stress; Switches; Voltage measurement; Weibull distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4673-4872-0
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2012.6479012
Filename
6479012
Link To Document