Title :
Carrier-population dynamics in group III-nitride quantum well laser structures
Author :
Chow, W.W. ; Zeng, K.C. ; Mair, R. ; Lin, J.Y. ; Jiang, H.X.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Summary form only given. Semiconductor lasers based on wide-bandgap group-III nitrides are interesting for several reasons. One is the numerous applications for blue-green and ultraviolet light sources. Another is the uncertainty in the physical processes governing laser behavior. An important process is the dynamics of the carrier distributions, because it pertains to the efficiency of populating the lasing states.
Keywords :
carrier mobility; light sources; population inversion; quantum well lasers; UV light sources; blue-green light sources; carrier-population dynamics; group III-nitride quantum well laser structures; laser behavior; lasing state population; physical processes; semiconductor lasers; wide-bandgap group-III nitrides; Atom optics; Gallium nitride; Graphics; Laser theory; Optical microscopy; Optical reflection; Optimized production technology; Quantum well lasers; Spatial resolution; Surfaces;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676171
