Dependence of laser beam induced current on geometry of the junction for HgCdTe photodiodes

Author

Feng, A.L. ; Li, Guolin ; Shi, S.W. ; Wu, M.Z. ; He, Guangjun ; Sun, Z.Q.

Author_Institution

Sch. of Phys. & Mater. Sci., Anhui Univ., Hefei, China

fYear

2013

fDate

19-22 Aug. 2013

Firstpage

19

Lastpage

20

Abstract

The dependence of laser beam induced current (LBIC) on the junction structure of n⁺-on-p HgCdTe photodiode has been numerically investigated. The simulated LBIC profiles are in good agreement with the experimental data. It is found that the peak LBIC magnitude is close to a linear relationship with both junction depth and length. In addition, the shape between two peaks becomes more flat with the increasing junction depth. A lateral and vertical current flow competition mechanism is proposed to explain the junction structure dependence of the LBIC signal.

Keywords

II-VI semiconductors; OBIC; cadmium compounds; mercury compounds; numerical analysis; p-n junctions; photodiodes; HgCdTe; LBIC profiles; LBIC signal; junction depth; junction length; junction structure; laser beam induced current; lateral current flow competition mechanism; n⁺-on-p photodiode; vertical current flow competition mechanism; Laser beams; Measurement by laser beam; P-n junctions; Performance evaluation; Photodiodes; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on

Conference_Location

Vancouver, BC

ISSN

2158-3234

Print_ISBN

978-1-4673-6309-9

Type

conf

DOI

10.1109/NUSOD.2013.6633103

Filename

6633103