Simulation on a charge sensitive infrared phototransistor for 45μm wavelength

Author

Ding, Lixin ; Li, Y.Q. ; Guo, F.M.

Author_Institution

Lab. of Polar Mater. & Devices, East China Normal Univ., Shanghai, China

fYear

2013

fDate

19-22 Aug. 2013

Firstpage

23

Lastpage

24

Abstract

Charge sensitive infrared phototransistors (CSIP) are well known for their capability for response spectrum tuning and single photon detection. In this paper, we established a physical model for a charge sensitive infrared phototransistor operating at 45μm wavelength using the Crosslight Apsys software. Several key physical mechanisms involved such as inter-subband optical transition and resonant tunneling of carriers were applied and fine tuned to obtain a better simulation result.

Keywords

infrared detectors; optical tuning; photodetectors; phototransistors; tunnelling; carrier resonant tunneling; charge sensitive infrared phototransistors; crosslight APSYS software; inter-subband optical transition; response spectrum tuning; single photon detection; wavelength 45 mum; Absorption; Gallium arsenide; HEMTs; Lighting; MODFETs; Phototransistors; Software; 2DEG; Apsys; charge sensitive infrared phototransistor; quantum well; single-photon detection;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on

Conference_Location

Vancouver, BC

ISSN

2158-3234

Print_ISBN

978-1-4673-6309-9

Type

conf

DOI

10.1109/NUSOD.2013.6633105

Filename

6633105