High-power 650-nm laser diodes grown by solid-source molecular beam epitaxy

Author

Toivonen, M. ; Savolainen, P. ; Jalonen, M. ; Salokatve, A. ; Dumitrescu, M. ; Pessa, M. ; Corvini, P.J. ; Fang, F. ; Jansen, M. ; Nabiev, R.F.

Author_Institution

Dept. of Phys., Tampere Univ. of Technol., Finland

fYear

1998

fDate

3-8 May 1998

Firstpage

284

Abstract

Summary form only given. Nearly 1 W cw power at 25 C was obtained from a 50-/spl mu/m broad-area InGaP SQW laser emitter operating at 652 nm. The devices were grown by solid source molecular beam epitaxy (SSMBE) and offer the possibility of a compact source suitable for photodynamic therapy.

Keywords

III-V semiconductors; gallium compounds; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; 25 C; 50 mum; 650 nm; 652 nm; InGaP; MBE; broad-area InGaP SQW laser emitter; compact source; cw power; high-power 650-nm laser diodes; photodynamic therapy; solid source molecular beam epitaxy; solid-source molecular beam epitaxy; Current measurement; Diode lasers; Molecular beam epitaxial growth; Optical fiber devices; Optical materials; Power generation; Pulse measurements; Substrates; Temperature dependence; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676173

Filename

676173